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英语翻译water,andthendepositedwithanAulayer(about40nm)usingavacuumthermalevaporator.CdS(99.99%)powderswereusedassourcematerials,andAufilmcoatedontheSisubstratewasusedascatalysttosynthesizeCdSnanowires.TheCdSpowd
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英语翻译
water,and then deposited with an Au layer (about 40 nm)
using a vacuum thermal evaporator.CdS (99.99%) powders
were used as source materials,and Au film coated on the Si
substrate was used as catalyst to synthesize CdS nanowires.
The CdS powders were put into half of an alumina boat,and
the Si substrate with Au layer was placed next to the CdS
powders and along the downstream side of the flowing argon.
The alumina boat,covered with a quartz plate to maintain a
higher CdS vapor pressure,was placed in the middle of the
quartz tube that was inserted in a horizontal tube furnace.
Prior to heating,the system was flushed with high-purity Ar
for 1 h to eliminate O2.And then under a constant flow of Ar
(100 sccm),the furnace was rapidly heated to 800 °C (about 4
min),held at this temperature for 120 min,and subsequently
cooled to room temperature.It was observed that yellow
spongelike products had appeared on the surface of the Si
substrate.
water,and then deposited with an Au layer (about 40 nm)
using a vacuum thermal evaporator.CdS (99.99%) powders
were used as source materials,and Au film coated on the Si
substrate was used as catalyst to synthesize CdS nanowires.
The CdS powders were put into half of an alumina boat,and
the Si substrate with Au layer was placed next to the CdS
powders and along the downstream side of the flowing argon.
The alumina boat,covered with a quartz plate to maintain a
higher CdS vapor pressure,was placed in the middle of the
quartz tube that was inserted in a horizontal tube furnace.
Prior to heating,the system was flushed with high-purity Ar
for 1 h to eliminate O2.And then under a constant flow of Ar
(100 sccm),the furnace was rapidly heated to 800 °C (about 4
min),held at this temperature for 120 min,and subsequently
cooled to room temperature.It was observed that yellow
spongelike products had appeared on the surface of the Si
substrate.
▼优质解答
答案和解析
水洗涤,然后沉积的Au层(约40nm)
利用真空热蒸发器.硫化镉(99.99%)粉末
在Si被用来作为源材料,和Au薄膜包衣
衬底被用作催化剂,合成了CdS纳米线.
硫化镉粉末放入一半氧化铝船,
Au层的Si衬底放在旁边的CDS
粉末和沿流动的氩气的下游侧.
的氧化铝舟皿中,覆盖的石英板,以维持
较高的CdS的蒸气压,被放置在中间的
插入在水平管式炉中的石英管.
在加热之前,该系统是用高纯度氩气冲洗
1小时,以消除氧气.然后根据一个恒定的流量的Ar
(100sccm的),该炉被迅速加热至800℃(约4
分钟),在此温度保持120分钟,随后
冷却至室温.据观察,黄色
在Si表面上的海绵状产品已经出现
基片上.
利用真空热蒸发器.硫化镉(99.99%)粉末
在Si被用来作为源材料,和Au薄膜包衣
衬底被用作催化剂,合成了CdS纳米线.
硫化镉粉末放入一半氧化铝船,
Au层的Si衬底放在旁边的CDS
粉末和沿流动的氩气的下游侧.
的氧化铝舟皿中,覆盖的石英板,以维持
较高的CdS的蒸气压,被放置在中间的
插入在水平管式炉中的石英管.
在加热之前,该系统是用高纯度氩气冲洗
1小时,以消除氧气.然后根据一个恒定的流量的Ar
(100sccm的),该炉被迅速加热至800℃(约4
分钟),在此温度保持120分钟,随后
冷却至室温.据观察,黄色
在Si表面上的海绵状产品已经出现
基片上.
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